Semiconductor device and method of forming insulating layer on conductive traces for electrical isolation in fine pitch bonding

ABSTRACT

A semiconductor device has a semiconductor die with a plurality of bumps formed over an active surface of the semiconductor die. A plurality of first conductive traces with interconnect sites is formed over a substrate. The bumps are wider than the interconnect sites. A surface treatment is formed over the first conductive traces. A plurality of second conductive traces is formed adjacent to the first conductive traces. An oxide layer is formed over the second conductive traces. A masking layer is formed over an area of the substrate away from the interconnect sites. The bumps are bonded to the interconnect sites so that the bumps cover a top surface and side surface of the interconnect sites. The oxide layer maintains electrical isolation between the bump and second conductive trace. An encapsulant is deposited around bumps between the semiconductor die and substrate.

CLAIM TO DOMESTIC PRIORITY

The present application is a continuation of U.S. application Ser. No.12/961,202, filed Dec. 6, 2010, now U.S. Pat. No. 8,349,721, which is acontinuation-in-part of U.S. application Ser. No. 12/051,349, filed Mar.19, 2008, now U.S. Pat. No. 7,851,345, which applications areincorporated herein by reference.

FIELD OF THE INVENTION

The present invention relates in general to semiconductor devices and,more particularly, to a semiconductor device having an insulating layerformed on the conductive signal traces for electrical isolation frombump material formed on adjacent interconnect sites in fine pitchbonding applications.

BACKGROUND OF THE INVENTION

Semiconductor devices are commonly found in modern electronic products.Semiconductor devices vary in the number and density of electricalcomponents. Discrete semiconductor devices generally contain one type ofelectrical component, e.g., light emitting diode (LED), small signaltransistor, resistor, capacitor, inductor, and power metal oxidesemiconductor field effect transistor (MOSFET). Integrated semiconductordevices typically contain hundreds to millions of electrical components.Examples of integrated semiconductor devices include microcontrollers,microprocessors, charged-coupled devices (CCDs), solar cells, anddigital micro-mirror devices (DMDs).

Semiconductor devices perform a wide range of functions such as signalprocessing, high-speed calculations, transmitting and receivingelectromagnetic signals, controlling electronic devices, transformingsunlight to electricity, and creating visual projections for televisiondisplays. Semiconductor devices are found in the fields ofentertainment, communications, power conversion, networks, computers,and consumer products. Semiconductor devices are also found in militaryapplications, aviation, automotive, industrial controllers, and officeequipment.

Semiconductor devices exploit the electrical properties of semiconductormaterials. The atomic structure of semiconductor material allows itselectrical conductivity to be manipulated by the application of anelectric field or base current or through the process of doping. Dopingintroduces impurities into the semiconductor material to manipulate andcontrol the conductivity of the semiconductor device.

A semiconductor device contains active and passive electricalstructures. Active structures, including bipolar and field effecttransistors, control the flow of electrical current. By varying levelsof doping and application of an electric field or base current, thetransistor either promotes or restricts the flow of electrical current.Passive structures, including resistors, capacitors, and inductors,create a relationship between voltage and current necessary to perform avariety of electrical functions. The passive and active structures areelectrically connected to form circuits, which enable the semiconductordevice to perform high-speed calculations and other useful functions.

Semiconductor devices are generally manufactured using two complexmanufacturing processes, i.e., front-end manufacturing, and back-endmanufacturing, each involving potentially hundreds of steps. Front-endmanufacturing involves the formation of a plurality of die on thesurface of a semiconductor wafer. Each die is typically identical andcontains circuits formed by electrically connecting active and passivecomponents. Back-end manufacturing involves singulating individual diefrom the finished wafer and packaging the die to provide structuralsupport and environmental isolation.

One goal of semiconductor manufacturing is to produce smallersemiconductor devices. Smaller devices typically consume less power,have higher performance, and can be produced more efficiently. Inaddition, smaller semiconductor devices have a smaller footprint, whichis desirable for smaller end products. A smaller die size can beachieved by improvements in the front-end process resulting in die withsmaller, higher density active and passive components. Back-endprocesses may result in semiconductor device packages with a smallerfootprint by improvements in electrical interconnection and packagingmaterials

Another goal of semiconductor manufacturing is to produce a packagesuitable for faster, reliable, smaller, and higher-density integratedcircuits (IC) at lower cost. Flipchip packages or wafer level packages(WLP) are ideally suited for ICs demanding high speed, high density, andgreater pin count. Flipchip style packaging involves mounting the activeside of the die facedown toward a chip carrier substrate or printedcircuit board (PCB). The electrical and mechanical interconnect betweenthe active devices on the die and conduction tracks on the carriersubstrate is achieved through a bump structure comprising a large numberof conductive bumps or balls. The bumps are formed by a reflow processapplied to solder material deposited on contact pads which are disposedon the semiconductor substrate. The bumps are then bonded to the carriersubstrate. The flipchip semiconductor package provides a shortelectrical conduction path from the active devices on the die to thecarrier substrate in order to reduce signal propagation, lowercapacitance, and achieve overall better circuit performance.

FIGS. 1a-1b show a conventional flipchip configuration with a soldermask dam disposed between the bond pads. In FIG. 1a , a semiconductordie or flipchip 10 is shown for mounting to chip carrier substrate orprinted circuit board (PCB) 14. The PCB contains a plurality of bondingpads 18. Flipchip 10 includes a plurality of bumps 12 disposed on anactive surface of the die for interconnect to external devices. Flipchip10 is mounted to PCB 14 in FIG. 1b . Bumps 12 are formed on bonding padsor under bump metallization layer (UBM) 15. An insulating layer 16 isformed on the active surface of flipchip 10 over UBM 15. A portion ofinsulating layer 16 is removed to attach bumps 12 to UBM 15. A soldermask dam 20 is formed on substrate 14. Bumps 12 are then metallurgicallyand electrically connected to bond pads 18 on substrate 14. The soldermask dam contains the solder reflow over the bond pads.

Many flipchip designs call for a fine pitch, e.g., less than 150micrometers (μm), between the interconnect structures, such as the bumppads and signal traces on the PCB, for a higher interconnect density andinput/output (I/O) terminal count. The solder mask dam requires morelateral space and therefore limits the bump and signal trace pitch.Without a solder mask dam, the solder could bridge or short to adjacentsignal traces during the solder reflow process to join the flipchip tothe PCB. For example, bumps 12 are shown in FIG. 2 as beingmetallurgically and electrically connected to the intended bond pads 18using a solder reflow process. During solder reflow in a fine pitchdesign, the solder material may extend over the adjacent signal traces22 due to misalignment or irregular bump diameter. In this case, bumps18 would electrically bridge or short to signal traces 22 causing adefect.

While most flipchip PCBs are fabricated with solder on pad (SOP)printing to make robust solder joints on the bond pad, in case of finepitch bonding, the SOP treatment of controlled collapsible chipconnection (C4) is limited due to potential bridges between adjacentinterconnect structures.

SUMMARY OF THE INVENTION

A need exists to form reliable and robust solder joints between theflipchip and printed circuit board in fine pitch applications.Accordingly, in one embodiment, the present invention is a method ofmaking a semiconductor device comprising the steps of providing asubstrate, forming a plurality of interconnect sites over the substrate,forming a plurality of conductive traces over the substrate adjacent tothe interconnect sites, forming a plurality of insulating layersrespectively over each of the conductive traces, and disposing asemiconductor die over the substrate with a plurality of interconnectstructures electrically connecting the semiconductor die to theinterconnect sites and contacting the insulating layers over theconductive traces.

In another embodiment, the present invention is a semiconductor devicecomprising a substrate and interconnect site formed over the substrate.A conductive trace is formed over the substrate less than 150micrometers from the interconnect site. An insulating layer is formedover the conductive trace.

In another embodiment, the present invention is a method of making asemiconductor device comprising the steps of providing a substrate,forming an interconnect site over the substrate, forming a conductivetrace over the substrate within a footprint of an interconnect structureto the interconnect site, and forming an insulating layer over theconductive trace.

In another embodiment, the present invention is a semiconductor devicecomprising a substrate and interconnect site formed over the substrate.A conductive trace is formed over the substrate within a footprint of aninterconnect structure to the interconnect site. An insulating layer isformed over the conductive trace.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1a-1b illustrate a conventional flipchip with bumps connected tobonding pads on a PCB;

FIG. 2 illustrates the bumps bridging to signal traces formed adjacentto the bonding pads;

FIG. 3 illustrates a PCB with different types of packages mounted to itssurface;

FIGS. 4a-4c illustrate further detail of the semiconductor packagesmounted to the PCB;

FIGS. 5a-5b illustrate a flipchip semiconductor device with bumpsproviding electrical interconnect between an active area of the die andchip carrier substrate;

FIGS. 6a-6d illustrate a process of forming a surface treatment on thecontact pads and an oxide layer on the signal traces;

FIGS. 7a-7b illustrate the surface treatment formed on the contact padand the oxide layer formed on the signal trace;

FIGS. 8a-8g illustrate an alternate process of forming the surfacetreatment on the contact pads and the oxide layer on the signal traces;

FIG. 9 illustrates a cross-sectional view of a flipchip semiconductordevice with oxidized signal traces for electrical isolation from bumpsformed on adjacent contact pads;

FIG. 10 illustrates a top view of a flipchip semiconductor device withoxidized signal traces for electrical isolation from bumps formed onadjacent contact pads;

FIGS. 11a-11h illustrate various interconnect structures formed over asemiconductor die for bonding to conductive traces on a substrate;

FIGS. 12a-12g illustrate the semiconductor die and interconnectstructure bonded to the conductive traces;

FIGS. 13a-13d illustrate the semiconductor die with a wedge-shapedinterconnect structure bonded to the conductive traces;

FIGS. 14a-14d illustrate another embodiment of the semiconductor die andinterconnect structure bonded to the conductive traces;

FIGS. 15a-15c illustrate stepped bump and stud bump interconnectstructures bonded to the conductive traces;

FIGS. 16a-16b illustrate conductive traces with conductive vias;

FIGS. 17a-17c illustrate mold underfill between the semiconductor dieand substrate;

FIG. 18 illustrates another mold underfill between the semiconductor dieand substrate;

FIG. 19 illustrates the semiconductor die and substrate after moldunderfill;

FIGS. 20a-20g illustrate various arrangements of the conductive traceswith open solder registration;

FIGS. 21a-21b illustrate the open solder registration with patchesbetween the conductive traces; and

FIG. 22 illustrates a POP with masking layer dam to restrain theencapsulant during mold underfill.

DETAILED DESCRIPTION OF THE DRAWINGS

The present invention is described in one or more embodiments in thefollowing description with reference to the figures, in which likenumerals represent the same or similar elements. While the invention isdescribed in terms of the best mode for achieving the invention'sobjectives, it will be appreciated by those skilled in the art that itis intended to cover alternatives, modifications, and equivalents as maybe included within the spirit and scope of the invention as defined bythe appended claims and their equivalents as supported by the followingdisclosure and drawings.

Semiconductor devices are generally manufactured using two complexmanufacturing processes: front-end manufacturing and back-endmanufacturing. Front-end manufacturing involves the formation of aplurality of die on the surface of a semiconductor wafer. Each die onthe wafer contains active and passive electrical components, which areelectrically connected to form functional electrical circuits. Activeelectrical components, such as transistors and diodes, have the abilityto control the flow of electrical current. Passive electricalcomponents, such as capacitors, inductors, resistors, and transformers,create a relationship between voltage and current necessary to performelectrical circuit functions.

Passive and active components are formed over the surface of thesemiconductor wafer by a series of process steps including doping,deposition, photolithography, etching, and planarization. Dopingintroduces impurities into the semiconductor material by techniques suchas ion implantation or thermal diffusion. The doping process modifiesthe electrical conductivity of semiconductor material in active devices,transforming the semiconductor material into an insulator, conductor, ordynamically changing the semiconductor material conductivity in responseto an electric field or base current. Transistors contain regions ofvarying types and degrees of doping arranged as necessary to enable thetransistor to promote or restrict the flow of electrical current uponthe application of the electric field or base current.

Active and passive components are formed by layers of materials withdifferent electrical properties. The layers can be formed by a varietyof deposition techniques determined in part by the type of materialbeing deposited. For example, thin film deposition can involve chemicalvapor deposition (CVD), physical vapor deposition (PVD), electrolyticplating, and electroless plating processes. Each layer is generallypatterned to form portions of active components, passive components, orelectrical connections between components.

The layers can be patterned using photolithography, which involves thedeposition of light sensitive material, e.g., photoresist, over thelayer to be patterned. A pattern is transferred from a photomask to thephotoresist using light. The portion of the photoresist patternsubjected to light is removed using a solvent, exposing portions of theunderlying layer to be patterned. The remainder of the photoresist isremoved, leaving behind a patterned layer. Alternatively, some types ofmaterials are patterned by directly depositing the material into theareas or voids formed by a previous deposition/etch process usingtechniques such as electroless and electrolytic plating.

Depositing a thin film of material over an existing pattern canexaggerate the underlying pattern and create a non-uniformly flatsurface. A uniformly flat surface is required to produce smaller andmore densely packed active and passive components. Planarization can beused to remove material from the surface of the wafer and produce auniformly flat surface. Planarization involves polishing the surface ofthe wafer with a polishing pad. An abrasive material and corrosivechemical are added to the surface of the wafer during polishing. Thecombined mechanical action of the abrasive and corrosive action of thechemical removes any irregular topography, resulting in a uniformly flatsurface.

Back-end manufacturing refers to cutting or singulating the finishedwafer into the individual die and then packaging the die for structuralsupport and environmental isolation. To singulate the die, the wafer isscored and broken along non-functional regions of the wafer called sawstreets or scribes. The wafer is singulated using a laser cutting toolor saw blade. After singulation, the individual die are mounted to apackage substrate that includes pins or contact pads for interconnectionwith other system components. Contact pads formed over the semiconductordie are then connected to contact pads within the package. Theelectrical connections can be made with solder bumps, stud bumps,conductive paste, or wirebonds. An encapsulant or other molding materialis deposited over the package to provide physical support and electricalisolation. The finished package is then inserted into an electricalsystem and the functionality of the semiconductor device is madeavailable to the other system components.

FIG. 3 illustrates electronic device 50 having a chip carrier substrateor printed circuit board (PCB) 52 with a plurality of semiconductorpackages mounted on its surface. Electronic device 50 can have one typeof semiconductor package, or multiple types of semiconductor packages,depending on the application. The different types of semiconductorpackages are shown in FIG. 3 for purposes of illustration.

Electronic device 50 can be a stand-alone system that uses thesemiconductor packages to perform one or more electrical functions.Alternatively, electronic device 50 can be a subcomponent of a largersystem. For example, electronic device 50 can be part of a cellularphone, personal digital assistant (PDA), digital video camera (DVC), orother electronic communication device. Alternatively, electronic device50 can be a graphics card, network interface card, or other signalprocessing card that can be inserted into a computer. The semiconductorpackage can include microprocessors, memories, application specificintegrated circuits (ASIC), logic circuits, analog circuits, RFcircuits, discrete devices, or other semiconductor die or electricalcomponents. The miniaturization and the weight reduction are essentialfor these products to be accepted by the market. The distance betweensemiconductor devices must be decreased to achieve higher density.

In FIG. 3, PCB 52 provides a general substrate for structural supportand electrical interconnect of the semiconductor packages mounted on thePCB. Conductive signal traces 54 are formed over a surface or withinlayers of PCB 52 using evaporation, electrolytic plating, electrolessplating, screen printing, or other suitable metal deposition process.Signal traces 54 provide for electrical communication between each ofthe semiconductor packages, mounted components, and other externalsystem components. Traces 54 also provide power and ground connectionsto each of the semiconductor packages.

In some embodiments, a semiconductor device has two packaging levels.First level packaging is a technique for mechanically and electricallyattaching the semiconductor die to an intermediate carrier. Second levelpackaging involves mechanically and electrically attaching theintermediate carrier to the PCB. In other embodiments, a semiconductordevice may only have the first level packaging where the die ismechanically and electrically mounted directly to the PCB.

For the purpose of illustration, several types of first level packaging,including wire bond package 56 and flipchip 58, are shown on PCB 52.Additionally, several types of second level packaging, including ballgrid array (BGA) 60, bump chip carrier (BCC) 62, dual in-line package(DIP) 64, land grid array (LGA) 66, multi-chip module (MCM) 68, quadflat non-leaded package (QFN) 70, and quad flat package 72, are shownmounted on PCB 52. Depending upon the system requirements, anycombination of semiconductor packages, configured with any combinationof first and second level packaging styles, as well as other electroniccomponents, can be connected to PCB 52. In some embodiments, electronicdevice 50 includes a single attached semiconductor package, while otherembodiments call for multiple interconnected packages. By combining oneor more semiconductor packages over a single substrate, manufacturerscan incorporate pre-made components into electronic devices and systems.Because the semiconductor packages include sophisticated functionality,electronic devices can be manufactured using cheaper components and astreamlined manufacturing process. The resulting devices are less likelyto fail and less expensive to manufacture resulting in a lower cost forconsumers.

FIGS. 4a-4c show exemplary semiconductor packages. FIG. 4a illustratesfurther detail of DIP 64 mounted on PCB 52. Semiconductor die 74includes an active region containing analog or digital circuitsimplemented as active devices, passive devices, conductive layers, anddielectric layers formed within the die and are electricallyinterconnected according to the electrical design of the die. Forexample, the circuit can include one or more transistors, diodes,inductors, capacitors, resistors, and other circuit elements formedwithin the active region of semiconductor die 74. Contact pads 76 areone or more layers of conductive material, such as aluminum (Al), copper(Cu), tin (Sn), nickel (Ni), gold (Au), or silver (Ag), and areelectrically connected to the circuit elements formed withinsemiconductor die 74. During assembly of DIP 64, semiconductor die 74 ismounted to an intermediate carrier 78 using a gold-silicon eutecticlayer or adhesive material such as thermal epoxy or epoxy resin. Thepackage body includes an insulative packaging material such as polymeror ceramic. Conductor leads 80 and bond wires 82 provide electricalinterconnect between semiconductor die 74 and PCB 52. Encapsulant 84 isdeposited over the package for environmental protection by preventingmoisture and particles from entering the package and contaminating die74 or bond wires 82.

FIG. 4b illustrates further detail of BCC 62 mounted on PCB 52.Semiconductor die 88 is mounted over carrier 90 using an underfill orepoxy-resin adhesive material 92. Bond wires 94 provide first levelpackaging interconnect between contact pads 96 and 98. Molding compoundor encapsulant 100 is deposited over semiconductor die 88 and bond wires94 to provide physical support and electrical isolation for the device.Contact pads 102 are formed over a surface of PCB 52 using a suitablemetal deposition process such as electrolytic plating or electrolessplating to prevent oxidation. Contact pads 102 are electricallyconnected to one or more conductive signal traces 54 in PCB 52. Bumps104 are formed between contact pads 98 of BCC 62 and contact pads 102 ofPCB 52.

In FIG. 4c , semiconductor die 58 is mounted face down to intermediatecarrier 106 with a flipchip style first level packaging. Active region108 of semiconductor die 58 contains analog or digital circuitsimplemented as active devices, passive devices, conductive layers, anddielectric layers formed according to the electrical design of the die.For example, the circuit can include one or more transistors, diodes,inductors, capacitors, resistors, and other circuit elements withinactive region 108. Semiconductor die 58 is electrically and mechanicallyconnected to carrier 106 through bumps 110.

BGA 60 is electrically and mechanically connected to PCB 52 with a BGAstyle second level packaging using bumps 112. Semiconductor die 58 iselectrically connected to conductive signal traces 54 in PCB 52 throughbumps 110, signal lines 114, and bumps 112. A molding compound orencapsulant 116 is deposited over semiconductor die 58 and carrier 106to provide physical support and electrical isolation for the device. Theflipchip semiconductor device provides a short electrical conductionpath from the active devices on semiconductor die 58 to conductiontracks on PCB 52 in order to reduce signal propagation distance, lowercapacitance, and improve overall circuit performance. In anotherembodiment, the semiconductor die 58 can be mechanically andelectrically connected directly to PCB 52 using flipchip style firstlevel packaging without intermediate carrier 106.

Flipchip semiconductor packages and wafer level packages (WLP) arecommonly used with integrated circuits (ICs) demanding high speed, highdensity, and greater pin count. Flipchip style semiconductor device 120involves mounting an active area 122 of semiconductor die 124 facedowntoward a chip carrier substrate or printed circuit board (PCB) 126, asshown in FIGS. 5a and 5b . Region 128 is a copper plated area that showsblind via connected with inner metal layer. Active area 122 containsactive and passive devices, conductive layers, and dielectric layersaccording to the electrical design of the die. The electrical andmechanical interconnect is achieved through a bump structure 130comprising a large number of individual conductive bumps or balls 132.The bumps are formed on bump pads or interconnect sites 134, which aredisposed on active area 122. The bump pads 134 are patterned anddeposited as an electrically conductive layer over active area 122 usinga physical vapor deposition (PVD), chemical vapor deposition (CVD),evaporation, sputtering, electrolytic plating, electroless plating, orother suitable deposition process. The bump pads 134 can be made withAl, Al alloy, Cu, Cu alloy, Sn, Ni, Au, Ag, or other electrically metalconductive material. The bump pads 134 can contain a UBM having awetting layer, barrier layer, and adhesive layer. The bump pads 134connect to the active and passive circuits by conduction tracks inactive area 122. An insulating layer 136 is formed over active area 122and bump pads 134. The insulating layer 136 can be made with siliconnitride (SixNy), silicon dioxide (SiO2), silicon oxynitride (SiON),tantalum pentoxide (Ta2O5), zircon (ZrO2), aluminum oxide (Al2O3), orother material having electrical insulation properties. The insulatinglayer 136 can be dispensed as liquid encapsulant followed byspin-coating or spray coating dielectric material with differentviscosity. The insulating layer 136 can also be pressed or coated tocover the semiconductor die. A portion of insulating layer 136 isremoved by an etching process to expose bump pads 134.

An electrically conductive bump material is deposited in the insulatinglayer opening over bump pads 134 using an evaporation, electrolyticplating, electroless plating, or ball drop process. The bump materialcan be any metal or electrically conductive material, e.g., Sn, lead(Pb), Ni, Au, Ag, Cu, bismuthinite (Bi), and alloys thereof. Forexample, the bump material can be eutectic Sn/Pb, high lead, lead free,or other solder materials. The bump material is reflowed by heating thematerial above its melting point to form bumps 132. In someapplications, bumps 132 are reflowed a second time to improve electricalcontact to bump pads 134.

The metal contact pad 138 and signal conductors or traces 140 are formedon PCB 126 within masking layer 142 by PVD, CVD, evaporation,sputtering, electrolytic plating, electroless plating, or other suitablemetal deposition process. Contact pads 138 and signal traces 140 can bemade with Cu, Al, Al/Cu alloys, or other electrically conductive metal.Signal traces 140 are formed adjacent to contact pads 138 with a finepitch, e.g., less than 150 μm, to achieve a high density interconnect.The flipchip semiconductor device provides a short electrical conductionpath from the active devices on semiconductor die 124 to conductiontracks on PCB 126 in order to reduce signal propagation, lowercapacitance, and achieve overall better circuit performance.

Further detail of forming the fine pitch, high density contact pads 138and signal traces 140 is shown in FIGS. 6a-6d . FIG. 6a shows themulti-layer PCB 126 with a plurality of contact pads 138 and signaltraces 140 formed on the PCB. A masking layer 142 is formed over contactpads 138 and signal traces 140. In FIG. 6b , mask layer 142 is patternedand exposed to ultraviolet (UV) light. The patterned area of mask layer142 is developed to expose contact pads 138. An electroless surfacetreatment is applied to contact pads 138 by immersion in a solution ofSn, electroless nickel immersion gold (ENIG), or organic solderabilitypreservative (OSP). FIG. 7a shows the electroless surface treatment 144formed over contact pad 138.

In FIG. 6c , the remaining portion of mask layer 142 is exposed anddeveloped. Since mask layer 142 is removed, contact pads 138 and signaltraces 140 in FIG. 5b are no longer constrained by the design rule usedin the prior art implementation of FIG. 1b . A film layer 146 is formedover contact pads 138. The film layer 146 can be made with dry film andartwork film and then UV irradiation. Film layer 146 has openings 148 toexpose signal traces 140. An oxidation treatment is applied to filmlayer 146 to selectively form an oxide layer through openings 148 ontosignal traces 140. The oxide layer can be made with cupric oxide layerfrom an oxygen atmosphere. Film layer 146 and electroless surfacetreatment 144 prevents formation of an oxide layer on contact pads 138.FIG. 7b shows oxide layer 150 formed over contact pad 138. In FIG. 6d ,the film layer 146 is removed leaving contact pads 138 covered byelectroless surface treatment 144 and signal traces 140 coated withoxide layer 150.

An alternate embodiment of forming the fine pitch, high-density contactpads 138 and signal traces 140 is shown in FIGS. 8a-8f . FIG. 8a showsthe multi-layer PCB 126 with a plurality of contact pads 138 and signaltraces 140 formed on the PCB. A masking layer 142 is formed over contactpads 138 and signal traces 140. The masking layer 142 is patterned,exposed to UV light, and developed to remove all portions of the maskinglayer over contact pads 138 and signal traces 140. FIG. 8b is a top viewof film layer 156 with openings 158. In FIGS. 8c and 8d , film layer 156is applied over signal traces 140. The openings 158 of film layer 156expose contact pads 138. An electroless surface treatment is selectivelyapplied to contact pads 138 by immersion in a solution of Sn, ENIG, orOSP. Film layer 156 prevents formation of the electroless surfacetreatment on signal traces 140. Film layer 156 is then removed. FIG. 8eshows electroless surface treatment 144 formed over contact pads 138.

In FIG. 8f , a film layer 160 is applied over contact pads 138. Filmlayer 160 has openings 162 over signal traces 140. An oxidationtreatment is applied to film layer 160 to selectively form an oxidelayer through openings 162 onto signal traces 140. Film layer 160 andelectroless surface treatment 144 prevents formation of the oxide layeron contact pads 138. Film layer 160 is then removed. FIG. 8g showscontact pads 138 covered by electroless surface treatment 144 and signaltraces 140 coated with oxide layer 150.

In FIG. 9, bumps 132 formed on bump pads 134 of semiconductor die 124are metallurgically and electrically connected to contact pads 138 onPCB 126 using a reflow process. The electroless surface treatment 144 oncontact pads 138 aids in the metallurgical connection. The spacingbetween contact pads 138 and signal traces 140 is a fine pitch, lessthan 150 μm. Accordingly, during the reflow process, the bump materialmay potentially extend over signal trace 140 due to misalignment orirregular bump diameter. In the event that bump 132 physically contactsoxide layer 150 over signal trace 140, the oxide coating over the signaltrace maintains electrical isolation between the bump and signal trace.The oxidized signal trace does not melt with the contact pad during thereflow process. Under the fine pitch design rule, bumps 132 can extendoutside the boundaries of contact pads 138, including the area oversignal traces 50, without unintentionally electrically bridging orshorting the contact pad to the signal trace. Moreover, by completelyremoving the masking layer 142 from contact pads 138 and signal traces140, these interconnect structures can be placed closer together, i.e.,given a finer pitch, without causing defects as the design rulerequiring additional lateral spacing for the masking layer between thecontact pads is no longer necessary. The oxide layer 150 over signaltrace 140 maintains electrical isolation of the signal trace withrespect to bump 132 and contact pad 138.

FIG. 10 shows a top view of a corner of PCB 126. Contact pads 138 arecoated with an electroless surface treatment 144. Signal traces 140 arecoated with oxide layer 150. Due to the fine pitch, the bumps, which aremetallurgically connected to contact pads 138, may extend over signaltraces 140. However, no defect occurs because the contact pad remainselectrically isolated from the signal trace due to the oxide layerformed over the signal trace. The oxidized signal trace does not meltwith the contact pad during the reflow process.

The demand for higher interconnect density and reduced packaging costrequire a fine pitch for high I/O count. By removing the final maskinglayer from the design, the semiconductor package can have a finer pitchbetween the interconnect structures and a higher I/O density. The signaltraces are coated with an oxide layer to prevent bridging during thereflow process which metallurgically joins the bumps to the contactpads. In the event that the bump physically contacts the oxide layerover the signal trace, due to misalignment or irregular bump diameter,the oxidized signal trace does not melt with the contact pad during thereflow process. The contact pad and bump remain electrically isolatedfrom the signal trace by virtue of the oxide layer formed over thesignal trace.

FIGS. 11-16 describe other embodiments with various interconnectstructures which can be used in combination with the electroless surfacetreatment and oxide layer over adjacent interconnect structures, asdescribed in FIGS. 6a-6d, 7a-7b, 8a-8g , and 9. FIG. 11a shows asemiconductor wafer 220 with a base substrate material 222, such assilicon, germanium, gallium arsenide, indium phosphide, or siliconcarbide, for structural support. A plurality of semiconductor die orcomponents 224 is formed on wafer 220 separated by saw streets 226 asdescribed above.

FIG. 11b shows a cross-sectional view of a portion of semiconductorwafer 220. Each semiconductor die 224 has a back surface 228 and activesurface 230 containing analog or digital circuits implemented as activedevices, passive devices, conductive layers, and dielectric layersformed within the die and electrically interconnected according to theelectrical design and function of the die. For example, the circuit caninclude one or more transistors, diodes, and other circuit elementsformed within active surface 230 to implement analog circuits or digitalcircuits, such as digital signal processor (DSP), ASIC, memory, or othersignal processing circuit. Semiconductor die 224 can also containintegrated passive devices (IPDs), such as inductors, capacitors, andresistors, for RF signal processing. In one embodiment, semiconductordie 224 is a flipchip type semiconductor die.

An electrically conductive layer 232 is formed over active surface 230using PVD, CVD, electrolytic plating, electroless plating process, orother suitable metal deposition process. Conductive layer 232 can be oneor more layers of Al, Cu, Sn, Ni, Au, Ag, or other suitable electricallyconductive material. Conductive layer 232 operates as contact padselectrically connected to the circuits on active surface 230.

FIG. 11c shows a portion of semiconductor wafer 220 with an interconnectstructure formed over contact pads 232. An electrically conductive bumpmaterial 234 is deposited over contact pads 232 using an evaporation,electrolytic plating, electroless plating, ball drop, or screen printingprocess. Bump material 234 can be Al, Sn, Ni, Au, Ag, Pb, Bi, Cu,solder, and combinations thereof, with an optional flux solution. Forexample, bump material 234 can be eutectic Sn/Pb, high-lead solder, orlead-free solder. Bump material 234 is generally compliant and undergoesplastic deformation greater than about 25 μm under a force equivalent toa vertical load of about 200 grams. Bump material 234 is bonded tocontact pad 232 using a suitable attachment or bonding process. Forexample, bump material 234 can be compression bonded to contact pad 232.Bump material 234 can also be reflowed by heating the material above itsmelting point to form spherical balls or bumps 236, as shown in FIG. 11d. In some applications, bumps 236 are reflowed a second time to improveelectrical connection to contact pad 232. Bumps 236 represent one typeof interconnect structure that can be formed over contact pad 232. Theinterconnect structure can also use stud bump, micro bump, or otherelectrical interconnect.

FIG. 11e shows another embodiment of the interconnect structure formedover contact pads 232 as composite bumps 238 including a non-fusible ornon-collapsible portion 240 and fusible or collapsible portion 242. Thefusible or collapsible and non-fusible or non-collapsible attributes aredefined for bumps 238 with respect to reflow conditions. The non-fusibleportion 240 can be Au, Cu, Ni, high-lead solder, or lead-tin alloy. Thefusible portion 242 can be Sn, lead-free alloy, Sn—Ag alloy, Sn—Ag—Cualloy, Sn—Ag—indium (In) alloy, eutectic solder, tin alloys with Ag, Cu,or Pb, or other relatively low temperature melt solder. In oneembodiment, given a contact pad 232 width or diameter of 100 μm, thenon-fusible portion 240 is about 45 μm in height and fusible portion 242is about 35 μm in height.

FIG. 11f shows another embodiment of the interconnect structure formedover contact pads 232 as bump 244 over conductive pillar 246. Bump 244is fusible or collapsible and conductive pillar 246 is non-fusible ornon-collapsible. The fusible or collapsible and non-fusible ornon-collapsible attributes are defined with respect to reflowconditions. Bump 244 can be Sn, lead-free alloy, Sn—Ag alloy, Sn—Ag—Cualloy, Sn—Ag—In alloy, eutectic solder, tin alloys with Ag, Cu, or Pb,or other relatively low temperature melt solder. Conductive pillar 246can be Au, Cu, Ni, high-lead solder, or lead-tin alloy. In oneembodiment, conductive pillar 246 is a Cu pillar and bump 244 is asolder cap. Given a contact pad 232 width or diameter of 100 μm,conductive pillar 246 is about 45 μm in height and bump 244 is about 35μm in height.

FIG. 11g shows another embodiment of the interconnect structure formedover contact pads 232 as bump material 248 with asperities 250. Bumpmaterial 248 is soft and deformable under reflow conditions with a lowyield strength and high elongation to failure, similar to bump material234. Asperities 250 are formed with a plated surface finish and areshown exaggerated in the figures for purposes of illustration. The scaleof asperities 250 is generally in the order about 1-25 μm. Theasperities can also be formed on bump 236, composite bump 238, and bump244.

In FIG. 11h , semiconductor wafer 220 is singulated through saw street226 using a saw blade or laser cutting tool 252 into individualsemiconductor die 224.

FIG. 12a shows a substrate or PCB 254 with conductive trace 256.Substrate 254 can be a single-sided FR5 laminate or 2-sided BT-resinlaminate. Semiconductor die 224 is positioned so that bump material 234is aligned with an interconnect site on conductive trace 256, see FIGS.20a-20g . Alternatively, bump material 234 can be aligned with aconductive pad or other interconnect site formed on substrate 254. Bumpmaterial 234 is wider than conductive trace 256. In one embodiment, bumpmaterial 234 has a width of less than 100 μm and conductive trace or pad256 has a width of 35 μm for a bump pitch of 150 μm. Conductive traces256 with interconnect sites are covered by electroless surface treatment255 and adjacent conductive traces 256 are coated with oxide orinsulating layer 257, as described in FIGS. 6a-6d and 8a-8g and similarto FIGS. 7a and 7 b.

A pressure or force F is applied to back surface 228 of semiconductordie 224 to press bump material 234 onto conductive trace 256. The forceF can be applied with an elevated temperature. Due to the compliantnature of bump material 234, the bump material deforms or extrudesaround the top surface and side surface of conductive trace 256,referred to as bump-on-lead (BOL). In particular, the application ofpressure causes bump material 234 to undergo a plastic deformationgreater than about 25 μm under force F equivalent to a vertical load ofabout 200 grams and cover the top surface and side surface of theconductive trace, as shown in FIG. 12b . Bump material 234 can also bemetallurgically connected to conductive trace 256 by bringing the bumpmaterial in physical contact with the conductive trace and thenreflowing the bump material under a reflow temperature.

By making conductive trace 256 narrower than bump material 234, theconductive trace pitch can be reduced to increase routing density andI/O count. The narrower conductive trace 256 reduces the force F neededto deform bump material 234 around the conductive trace. For example,the requisite force F may be 30-50% of the force needed to deform bumpmaterial against a conductive trace or pad that is wider than the bumpmaterial. The lower compressive force F is useful for fine pitchinterconnect and small die to maintain coplanarity with a specifiedtolerance and achieve uniform z-direction deformation and highreliability interconnect union. In addition, deforming bump material 234around conductive trace 256 mechanically locks the bump to the trace toprevent die shifting or die floating during reflow. The oxide layer 257prevents electrical shorting between adjacent conductive traces 256, asdescribed in FIG. 9.

FIG. 12c shows bump 236 formed over contact pad 232 of semiconductor die224. Semiconductor die 224 is positioned so that bump 236 is alignedwith an interconnect site on conductive trace 256. Alternatively, bump236 can be aligned with a conductive pad or other interconnect siteformed on substrate 254. Bump 236 is wider than conductive trace 256.Conductive traces 256 with interconnect sites are covered by electrolesssurface treatment 255 and adjacent conductive traces 256 are coated withoxide or insulating layer 257, as described in FIGS. 6a-6d and 8a-8g andsimilar to FIGS. 7a and 7 b.

A pressure or force F is applied to back surface 228 of semiconductordie 224 to press bump 236 onto conductive trace 256. The force F can beapplied with an elevated temperature. Due to the compliant nature ofbump 236, the bump deforms or extrudes around the top surface and sidesurface of conductive trace 256. In particular, the application ofpressure causes bump material 236 to undergo a plastic deformation andcover the top surface and side surface of conductive trace 256. Bump 236can also be metallurgically connected to conductive trace 256 bybringing the bump in physical contact with the conductive trace underreflow temperature.

By making conductive trace 256 narrower than bump 236, the conductivetrace pitch can be reduced to increase routing density and I/O count.The narrower conductive trace 256 reduces the force F needed to deformbump 236 around the conductive trace. For example, the requisite force Fmay be 30-50% of the force needed to deform a bump against a conductivetrace or pad that is wider than the bump. The lower compressive force Fis useful for fine pitch interconnect and small die to maintaincoplanarity within a specified tolerance and achieve uniform z-directiondeformation and high reliability interconnect union. In addition,deforming bump 236 around conductive trace 256 mechanically locks thebump to the trace to prevent die shifting or die floating during reflow.The oxide layer 257 prevents electrical shorting between adjacentconductive traces 256, as described in FIG. 9.

FIG. 12d shows composite bump 238 formed over contact pad 232 ofsemiconductor die 224. Semiconductor die 224 is positioned so thatcomposite bump 238 is aligned with an interconnect site on conductivetrace 256. Alternatively, composite bump 238 can be aligned with aconductive pad or other interconnect site formed on substrate 254.Composite bump 238 is wider than conductive trace 256. Conductive traces256 with interconnect sites are covered by electroless surface treatment255 and adjacent conductive traces 256 are coated with oxide orinsulating layer 257, as described in FIGS. 6a-6d and 8 a-8 g andsimilar to FIGS. 7a and 7 b.

A pressure or force F is applied to back surface 228 of semiconductordie 224 to press fusible portion 242 onto conductive trace 256. Theforce F can be applied with an elevated temperature. Due to thecompliant nature of fusible portion 242, the fusible portion deforms orextrudes around the top surface and side surface of conductive trace256. In particular, the application of pressure causes fusible portion242 to undergo a plastic deformation and cover the top surface and sidesurface of conductive trace 256. Composite bump 238 can also bemetallurgically connected to conductive trace 256 by bringing fusibleportion 242 in physical contact with the conductive trace under reflowtemperature. The non-fusible portion 240 does not melt or deform duringthe application of pressure or temperature and retains its height andshape as a vertical standoff between semiconductor die 224 and substrate254. The additional displacement between semiconductor die 224 andsubstrate 254 provides greater coplanarity tolerance between the matingsurfaces.

During a reflow process, a large number (e.g., thousands) of compositebumps 238 on semiconductor die 224 are attached to interconnect sites onconductive trace 256 of substrate 254. Some of the bumps 238 may fail toproperly connect to conductive trace 256, particularly if die 224 iswarped. Recall that composite bump 238 is wider than conductive trace256. With a proper force applied, the fusible portion 242 deforms orextrudes around the top surface and side surface of conductive trace 256and mechanically locks composite bump 238 to the conductive trace. Themechanical interlock is formed by nature of the fusible portion 242being softer and more compliant than conductive trace 256 and thereforedeforming over the top surface and around the side surface of theconductive trace for greater contact surface area. The mechanicalinterlock between composite bump 238 and conductive trace 256 holds thebump to the conductive trace during reflow, i.e., the bump andconductive trace do not lose contact. The oxide layer 257 preventselectrical shorting between adjacent conductive traces 256, as describedin FIG. 9. Accordingly, composite bump 238 mating to conductive trace256 reduces bump interconnect failures.

FIG. 12e shows conductive pillar 246 and bump 244 formed over contactpad 232 of semiconductor die 224. Semiconductor die 224 is positioned sothat bump 244 is aligned with an interconnect site on conductive trace256. Alternatively, bump 244 can be aligned with a conductive pad orother interconnect site formed on substrate 254. Bump 244 is wider thanconductive trace 256. Conductive traces 256 with interconnect sites arecovered by electroless surface treatment 255 and adjacent conductivetraces 256 are coated with oxide or insulating layer 257, as describedin FIGS. 6a-6d and 8a-8g and similar to FIGS. 7a and 7 b.

A pressure or force F is applied to back surface 228 of semiconductordie 224 to press bump 244 onto conductive trace 256. The force F can beapplied with an elevated temperature. Due to the compliant nature ofbump 244, the bump deforms or extrudes around the top surface and sidesurface of conductive trace 256. In particular, the application ofpressure causes bump 244 to undergo a plastic deformation and cover thetop surface and side surface of conductive trace 256. Conductive pillar246 and bump 244 can also be metallurgically connected to conductivetrace 256 by bringing the bump in physical contact with the conductivetrace under reflow temperature. Conductive pillar 246 does not melt ordeform during the application of pressure or temperature and retains itsheight and shape as a vertical standoff between semiconductor die 224and substrate 254. The additional displacement between semiconductor die224 and substrate 254 provides greater coplanarity tolerance between themating surfaces. The wider bump 244 and narrower conductive trace 256have similar low requisite compressive force and mechanical lockingfeatures and advantages described above for bump material 234 and bump236. The oxide layer 257 prevents electrical shorting between adjacentconductive traces 256, as described in FIG. 9.

FIG. 12f shows bump material 248 with asperities 250 formed over contactpad 232 of semiconductor die 224. Semiconductor die 224 is positioned sothat bump material 248 is aligned with an interconnect site onconductive trace 256. Alternatively, bump material 248 can be alignedwith a conductive pad or other interconnect site formed on substrate254. Bump material 248 is wider than conductive trace 256. A pressure orforce F is applied to back surface 228 of semiconductor die 224 to pressbump material 248 onto conductive trace 256. The force F can be appliedwith an elevated temperature. Due to the compliant nature of bumpmaterial 248, the bump deforms or extrudes around the top surface andside surface of conductive trace 256. In particular, the application ofpressure causes bump material 248 to undergo a plastic deformation andcover the top surface and side surface of conductive trace 256. Inaddition, asperities 250 are metallurgically connected to conductivetrace 256. Asperities 250 are sized on the order about 1-25 μm.

FIG. 12g shows a substrate or PCB 258 with trapezoidal conductive trace260 having angled or sloped sides. Bump material 261 is formed overcontact pad 232 of semiconductor die 224. Semiconductor die 224 ispositioned so that bump material 261 is aligned with an interconnectsite on conductive trace 260. Alternatively, bump material 261 can bealigned with a conductive pad or other interconnect site formed onsubstrate 258. Bump material 261 is wider than conductive trace 260.Conductive traces 260 with interconnect sites are covered by electrolesssurface treatment 263 and adjacent conductive traces 260 are coated withoxide or insulating layer 265, as described in FIGS. 6a-6d and 8a-8g andsimilar to FIGS. 7a and 7 b.

A pressure or force F is applied to back surface 228 of semiconductordie 224 to press bump material 261 onto conductive trace 260. The forceF can be applied with an elevated temperature. Due to the compliantnature of bump material 261, the bump material deforms or extrudesaround the top surface and side surface of conductive trace 260. Inparticular, the application of pressure causes bump material 261 toundergo a plastic deformation under force F to cover the top surface andthe angled side surface of conductive trace 260. Bump material 261 canalso be metallurgically connected to conductive trace 260 by bringingthe bump material in physical contact with the conductive trace and thenreflowing the bump material under a reflow temperature. The oxide layer265 prevents electrical shorting between adjacent conductive traces 260,as described in FIG. 9.

FIGS. 13a-13d show a BOL embodiment of semiconductor die 224 andelongated composite bump 262 having a non-fusible or non-collapsibleportion 264 and fusible or collapsible portion 266. The non-fusibleportion 264 can be Au, Cu, Ni, high-lead solder, or lead-tin alloy. Thefusible portion 266 can be Sn, lead-free alloy, Sn—Ag alloy, Sn—Ag—Cualloy, Sn—Ag—In alloy, eutectic solder, tin alloys with Ag, Cu, or Pb,or other relatively low temperature melt solder. The non-fusible portion264 makes up a larger part of composite bump 262 than the fusibleportion 266. The non-fusible portion 264 is fixed to contact pad 232 ofsemiconductor die 224.

Semiconductor die 224 is positioned so that composite bump 262 isaligned with an interconnect site on conductive trace 268 formed onsubstrate 270, as shown in FIG. 13a . Composite bump 262 is taperedalong conductive trace 268, i.e., the composite bump has a wedge shape,longer along a length of conductive trace 268 and narrower across theconductive trace. The tapered aspect of composite bump 262 occurs alongthe length of conductive trace 268. The view in FIG. 13a shows theshorter aspect or narrowing taper co-linear with conductive trace 268.The view in FIG. 13b , normal to FIG. 13a , shows the longer aspect ofthe wedge-shaped composite bump 262. The shorter aspect of compositebump 262 is wider than conductive trace 268. The fusible portion 266collapses around conductive trace 268 upon application of pressureand/or reflow with heat, as shown in FIGS. 13c and 13d . The non-fusibleportion 264 does not melt or deform during reflow and retains its formand shape. The non-fusible portion 264 can be dimensioned to provide astandoff distance between semiconductor die 224 and substrate 270. Afinish such as Cu OSP can be applied to substrate 270. Conductive traces268 with interconnect sites are covered by electroless surface treatment267 and adjacent conductive traces 268 are coated with oxide orinsulating layer 269, as described in FIGS. 6a-6d and 8a-8g and similarto FIGS. 7 a and 7 b.

During a reflow process, a large number (e.g., thousands) of compositebumps 262 on semiconductor die 224 are attached to interconnect sites onconductive trace 268 of substrate 270. Some of the bumps 262 may fail toproperly connect to conductive trace 268, particularly if semiconductordie 224 is warped. Recall that composite bump 262 is wider thanconductive trace 268. With a proper force applied, the fusible portion266 deforms or extrudes around the top surface and side surface ofconductive trace 268 and mechanically locks composite bump 262 to theconductive trace. The mechanical interlock is formed by nature of thefusible portion 266 being softer and more compliant than conductivetrace 268 and therefore deforming around the top surface and sidesurface of the conductive trace for greater contact area. Thewedge-shape of composite bump 262 increases contact area between thebump and conductive trace, e.g., along the longer aspect of FIGS. 13band 13d , without sacrificing pitch along the shorter aspect of FIGS.13a and 13c . The mechanical interlock between composite bump 262 andconductive trace 268 holds the bump to the conductive trace duringreflow, i.e., the bump and conductive trace do not lose contact. Theoxide layer 269 prevents electrical shorting between adjacent conductivetraces 268, as described in FIG. 9. Accordingly, composite bump 262mating to conductive trace 268 reduces bump interconnect failures.

FIGS. 14a-14d show a BOL embodiment of semiconductor die 224 with bumpmaterial 274 formed over contact pads 232, similar to FIG. 11c . In FIG.14a , bump material 274 is generally compliant and undergoes plasticdeformation greater than about 25 μm under a force equivalent to avertical load of about 200 grams. Bump material 274 is wider thanconductive trace 276 on substrate 278. A plurality of asperities 280 isformed on conductive trace 276 with a height on the order about 1-25 μm.

Semiconductor die 224 is positioned so that bump material 274 is alignedwith an interconnect site on conductive trace 276. Alternatively, bumpmaterial 274 can be aligned with a conductive pad or other interconnectsite formed on substrate 278. A pressure or force F is applied to backsurface 228 of semiconductor die 224 to press bump material 274 ontoconductive trace 276 and asperities 280, as shown in FIG. 14b . Theforce F can be applied with an elevated temperature. Due to thecompliant nature of bump material 274, the bump material deforms orextrudes around the top surface and side surface of conductive trace 276and asperities 280. In particular, the application of pressure causesbump material 274 to undergo a plastic deformation and cover the topsurface and side surface of conductive trace 276 and asperities 280. Theplastic flow of bump material 274 creates macroscopic mechanicalinterlocking points between the bump material and the top surface andside surface of conductive trace 276 and asperities 280. The plasticflow of bump material 274 occurs around the top surface and side surfaceof conductive trace 276 and asperities 280, but does not extendexcessively onto substrate 278, which could cause electrical shortingand other defects. The mechanical interlock between the bump materialand the top surface and side surface of conductive trace 276 andasperities 280 provides a robust connection with greater contact areabetween the respective surfaces, without significantly increasing thebonding force. The mechanical interlock between the bump material andthe top surface and side surface of conductive trace 276 and asperities280 also reduces lateral die shifting during subsequent manufacturingprocesses, such as encapsulation.

FIG. 14c shows another BOL embodiment with bump material 274 narrowerthan conductive trace 276. A pressure or force F is applied to backsurface 228 of semiconductor die 224 to press bump material 274 ontoconductive trace 276 and asperities 280. The force F can be applied withan elevated temperature. Due to the compliant nature of bump material274, the bump material deforms or extrudes over the top surface ofconductive trace 276 and asperities 280. In particular, the applicationof pressure causes bump material 274 to undergo a plastic deformationand cover the top surface of conductive trace 276 and asperities 280.The plastic flow of bump material 274 creates macroscopic mechanicalinterlocking points between the bump material and the top surface ofconductive trace 276 and asperities 280. The mechanical interlockbetween the bump material and the top surface of conductive trace 276and asperities 280 provides a robust connection with greater contactarea between the respective surfaces, without significantly increasingthe bonding force. The mechanical interlock between the bump materialand the top surface of conductive trace 276 and asperities 280 alsoreduces lateral die shifting during subsequent manufacturing processes,such as encapsulation.

FIG. 14d shows another BOL embodiment with bump material 274 formed overan edge of conductive trace 276, i.e., part of the bump material is overthe conductive trace and part of the bump material is not over theconductive trace. A pressure or force F is applied to back surface 228of semiconductor die 224 to press bump material 274 onto conductivetrace 276 and asperities 280. The force F can be applied with anelevated temperature. Due to the compliant nature of bump material 274,the bump material deforms or extrudes over the top surface and sidesurface of conductive trace 276 and asperities 280. In particular, theapplication of pressure causes bump material 274 to undergo a plasticdeformation and cover the top surface and side surface of conductivetrace 276 and asperities 280. The plastic flow of bump material 274creates macroscopic mechanical interlocking between the bump materialand the top surface and side surface of conductive trace 276 andasperities 280. The mechanical interlock between the bump material andthe top surface and side surface of conductive trace 276 and asperities280 provides a robust connection with greater contact area between therespective surfaces, without significantly increasing the bonding force.The mechanical interlock between the bump material and the top surfaceand side surface of conductive trace 276 and asperities 280 also reduceslateral die shifting during subsequent manufacturing processes, such asencapsulation.

FIGS. 15a-15c show a BOL embodiment of semiconductor die 224 with bumpmaterial 284 formed over contact pads 232, similar to FIG. 11c . A tip286 extends from the body of bump material 284 as a stepped bump withtip 286 narrower than the body of bump material 284, as shown in FIG.15a . Semiconductor die 224 is positioned so that bump material 284 isaligned with an interconnect site on conductive trace 288 on substrate290. More specifically, tip 286 is centered over an interconnect site onconductive trace 288. Alternatively, bump material 284 and tip 286 canbe aligned with a conductive pad or other interconnect site formed onsubstrate 290. Bump material 284 is wider than conductive trace 288 onsubstrate 290.

Conductive trace 288 is generally compliant and undergoes plasticdeformation greater than about 25 μm under a force equivalent to avertical load of about 200 grams. A pressure or force F is applied toback surface 228 of semiconductor die 224 to press tip 284 ontoconductive trace 288. The force F can be applied with an elevatedtemperature. Due to the compliant nature of conductive trace 288, theconductive trace deforms around tip 286, as shown in FIG. 15b . Inparticular, the application of pressure causes conductive trace 288 toundergo a plastic deformation and cover the top surface and side surfaceof tip 286.

FIG. 15c shows another BOL embodiment with rounded bump material 294formed over contact pads 232. A tip 296 extends from the body of bumpmaterial 294 to form a stud bump with the tip narrower than the body ofbump material 294. Semiconductor die 224 is positioned so that bumpmaterial 294 is aligned with an interconnect site on conductive trace298 on substrate 300. More specifically, tip 296 is centered over aninterconnect site on conductive trace 298. Alternatively, bump material294 and tip 296 can be aligned with a conductive pad or otherinterconnect site formed on substrate 300. Bump material 294 is widerthan conductive trace 298 on substrate 300.

Conductive trace 298 is generally compliant and undergoes plasticdeformation greater than about 25 μm under a force equivalent to avertical load of about 200 grams. A pressure or force F is applied toback surface 228 of semiconductor die 224 to press tip 296 ontoconductive trace 298. The force F can be applied with an elevatedtemperature. Due to the compliant nature of conductive trace 298, theconductive trace deforms around tip 296. In particular, the applicationof pressure causes conductive trace 298 to undergo a plastic deformationand cover the top surface and side surface of tip 296.

The conductive traces described in FIGS. 12a-12g, 13a-13d, and 14a-14dcan also be compliant material as described in FIGS. 15a -15 c.

FIGS. 16a-16b show a BOL embodiment of semiconductor die 224 with bumpmaterial 304 formed over contact pads 232, similar to FIG. 11c . Bumpmaterial 304 is generally compliant and undergoes plastic deformationgreater than about 25 μm under a force equivalent to a vertical load ofabout 200 grams. Bump material 304 is wider than conductive trace 306 onsubstrate 308. A conductive via 310 is formed through conductive trace306 with an opening 312 and conductive sidewalls 314, as shown in FIG.16a . Conductive traces 306 with interconnect sites are covered byelectroless surface treatment 305 and adjacent conductive traces 306 arecoated with oxide or insulating layer 307, as described in FIGS. 6a-6dand 8a-8g and similar to FIGS. 7a and 7 b.

Semiconductor die 224 is positioned so that bump material 304 is alignedwith an interconnect site on conductive trace 306, see FIGS. 20-20 g.Alternatively, bump material 304 can be aligned with a conductive pad orother interconnect site formed on substrate 308. A pressure or force Fis applied to back surface 228 of semiconductor die 224 to press bumpmaterial 304 onto conductive trace 306 and into opening 312 ofconductive via 310. The force F can be applied with an elevatedtemperature. Due to the compliant nature of bump material 304, the bumpmaterial deforms or extrudes around the top surface and side surface ofconductive trace 306 and into opening 312 of conductive vias 310, asshown in FIG. 16b . In particular, the application of pressure causesbump material 304 to undergo a plastic deformation and cover the topsurface and side surface of conductive trace 306 and into opening 312 ofconductive via 310. The oxide layer 307 prevents electrical shortingbetween adjacent conductive traces 306, as described in FIG. 9. Bumpmaterial 304 is thus electrically connected to conductive trace 306 andconductive sidewalls 314 for z-direction vertical interconnect throughsubstrate 308. The plastic flow of bump material 304 creates amechanical interlock between the bump material and the top surface andside surface of conductive trace 306 and opening 312 of conductive via310. The mechanical interlock between the bump material and the topsurface and side surface of conductive trace 306 and opening 312 ofconductive via 310 provides a robust connection with greater contactarea between the respective surfaces, without significantly increasingthe bonding force. The mechanical interlock between the bump materialand the top surface and side surface of conductive trace 306 and opening312 of conductive via 310 also reduces lateral die shifting duringsubsequent manufacturing processes, such as encapsulation. Sinceconductive via 310 is formed within the interconnect site with bumpmaterial 304, the total substrate interconnect area is reduced.

In the BOL embodiments of FIGS. 12a-12g, 13a-13d, 14a-14d, 15a-15c, and16a-16b , by making the conductive trace narrower than the interconnectstructure, the conductive trace pitch can be reduced to increase routingdensity and I/O count. The narrower conductive trace reduces the force Fneeded to deform the interconnect structure around the conductive trace.For example, the requisite force F may be 30-50% of the force needed todeform a bump against a conductive trace or pad that is wider than thebump. The lower compressive force F is useful for fine pitchinterconnect and small die to maintain coplanarity within a specifiedtolerance and achieve uniform z-direction deformation and highreliability interconnect union. In addition, deforming the interconnectstructure around the conductive trace mechanically locks the bump to thetrace to prevent die shifting or die floating during reflow.

FIGS. 17a-17c show a mold underfill (MUF) process to deposit encapsulantaround the bumps between the semiconductor die and substrate. FIG. 17ashows semiconductor die 224 mounted to substrate 254 using bump material234 from FIG. 12b and placed between upper mold support 316 and lowermold support 318 of chase mold 320. The other semiconductor die andsubstrate combinations from FIGS. 12a-12g, 13a-13d, 14a-14d, 15a-15c,and 16a-16b can be placed between upper mold support 316 and lower moldsupport 318 of chase mold 320. The upper mold support 316 includescompressible releasing film 322.

In FIG. 17b , upper mold support 316 and lower mold support 318 arebrought together to enclose semiconductor die 224 and substrate 254 withan open space over the substrate and between the semiconductor die andsubstrate. Compressible releasing film 322 conforms to back surface 228and side surface of semiconductor die 224 to block formation ofencapsulant on these surfaces. An encapsulant 324 in a liquid state isinjected into one side of chase mold 320 with nozzle 326 while anoptional vacuum assist 328 draws pressure from the opposite side touniformly fill the open space over substrate 254 and the open spacebetween semiconductor die 224 and substrate 254 with the encapsulant.Encapsulant 324 can be polymer composite material, such as epoxy resinwith filler, epoxy acrylate with filler, or polymer with proper filler.Encapsulant 324 is non-conductive and environmentally protects thesemiconductor device from external elements and contaminants.Compressible material 322 prevents encapsulant 324 from flowing overback surface 228 and around the side surface of semiconductor die 224.Encapsulant 324 is cured. The back surface 228 and side surface ofsemiconductor die 224 remain exposed from encapsulant 324.

FIG. 17c shows an embodiment of MUF and mold overfill (MOF), i.e.,without compressible material 322. Semiconductor die 224 and substrate254 are placed between upper mold support 316 and lower mold support 318of chase mold 320. The upper mold support 316 and lower mold support 318are brought together to enclose semiconductor die 224 and substrate 254with an open space over the substrate, around the semiconductor die, andbetween the semiconductor die and substrate. Encapsulant 324 in a liquidstate is injected into one side of chase mold 320 with nozzle 326 whilean optional vacuum assist 328 draws pressure from the opposite side touniformly fill the open space around semiconductor die 224 and oversubstrate 254 and the open space between semiconductor die 224 andsubstrate 254 with the encapsulant. Encapsulant 324 is cured.

FIG. 18 shows another embodiment of depositing encapsulant aroundsemiconductor die 224 and in the gap between semiconductor die 224 andsubstrate 254. Semiconductor die 224 and substrate 254 are enclosed bydam 330. Encapsulant 332 is dispensed from nozzles 334 in a liquid stateinto dam 330 to fill the open space over substrate 254 and the openspace between semiconductor die 224 and substrate 254. The volume ofencapsulant 332 dispensed from nozzles 334 is controlled to fill dam 330without covering back surface 228 or the side surface of semiconductordie 224. Encapsulant 332 is cured.

FIG. 19 shows semiconductor die 224 and substrate 254 after the MUFprocess from FIGS. 17a, 17c , and 18. Encapsulant 324 is uniformlydistributed over substrate 254 and around bump material 234 betweensemiconductor die 224 and substrate 254.

FIGS. 20a-20g show top views of various conductive trace layouts onsubstrate or PCB 340. In FIG. 20a , conductive trace 342 is a straightconductor with integrated bump pad or interconnect site 344 formed onsubstrate 340. The sides of substrate bump pad 344 can be co-linear withconductive trace 342. In the prior art, a solder registration opening(SRO) is typically formed over the interconnect site to contain the bumpmaterial during reflow. The SRO increases interconnect pitch and reducesI/O count. In contrast, masking layer 346 can be formed over a portionof substrate 340; however, the masking layer is not formed aroundsubstrate bump pad 344 of conductive trace 342. That is, the portion ofconductive trace 342 designed to mate with the bump material is devoidof any SRO of masking layer 346 that would have been used for bumpcontainment during reflow.

Semiconductor die 224 is placed over substrate 340 and the bump materialis aligned with substrate bump pads 344. The bump material iselectrically and metallurgically connected to substrate bump pads 344 bybringing the bump material in physical contact with the bump pad andthen reflowing the bump material under a reflow temperature.

In another embodiment, an electrically conductive bump material isdeposited over substrate bump pad 344 using an evaporation, electrolyticplating, electroless plating, ball drop, or screen printing process. Thebump material can be Al, Sn, Ni, Au, Ag, Pb, Bi, Cu, solder, andcombinations thereof, with an optional flux solution. For example, thebump material can be eutectic Sn/Pb, high-lead solder, or lead-freesolder. The bump material is bonded to substrate bump pad 344 using asuitable attachment or bonding process. In one embodiment, the bumpmaterial is reflowed by heating the material above its melting point toform bump or interconnect 348, as shown in FIG. 20b . In someapplications, bump 348 is reflowed a second time to improve electricalcontact to substrate bump pad 344. The bump material around the narrowsubstrate bump pad 344 maintains die placement during reflow.

In high routing density applications, it is desirable to minimize escapepitch of conductive traces 342. The escape pitch between conductivetraces 342 can be reduced by eliminating the masking layer for thepurpose of reflow containment, i.e., by reflowing the bump materialwithout a masking layer. Since no SRO is formed around die bump pad 232or substrate bump pad 344, conductive traces 342 can be formed with afiner pitch, i.e., conductive trace 342 can be disposed closer togetheror to nearby structures. With no SRO around substrate bump pad 344, thepitch between conductive traces 342 is given as P=D+PLT+W/2, wherein Dis the base diameter of bump 348, PLT is die placement tolerance, and Wis the width of conductive trace 342. In one embodiment, given a bumpbase diameter of 100 μm, PLT of 10 μm, and trace line width of 30 μm,the minimum escape pitch of conductive trace 342 is 125 μm. Themask-less bump formation eliminates the need to account for the ligamentspacing of masking material between adjacent openings, solder maskregistration tolerance (SRT), and minimum resolvable SRO, as found inthe prior art.

When the bump material is reflowed without a masking layer tometallurgically and electrically connect die bump pad 232 to substratebump pad 344, the wetting and surface tension causes the bump materialto maintain self-confinement and be retained within the space betweendie bump pad 232 and substrate bump pad 344 and portion of substrate 340immediately adjacent to conductive trace 342 substantially within thefootprint of the bump pads.

To achieve the desired self-confinement property, the bump material canbe immersed in a flux solution prior to placement on die bump pad 232 orsubstrate bump pad 344 to selectively render the region contacted by thebump material more wettable than the surrounding area of conductivetraces 342. The molten bump material remains confined substantiallywithin the area defined by the bump pads due to the wettable propertiesof the flux solution. The bump material does not run-out to the lesswettable areas. A thin oxide layer or other insulating layer can beformed over areas where bump material is not intended to make the arealess wettable. Hence, masking layer 340 is not needed around die bumppad 232 or substrate bump pad 344.

FIG. 20c shows another embodiment of parallel conductive traces 352 as astraight conductor with integrated rectangular bump pad or interconnectsite 354 formed on substrate 350. In this case, substrate bump pad 354is wider than conductive trace 352, but less than the width of themating bump. The sides of substrate bump pad 354 can be parallel toconductive trace 352. Masking layer 356 can be formed over a portion ofsubstrate 350; however, the masking layer is not formed around substratebump pad 354 of conductive trace 352. That is, the portion of conductivetrace 352 designed to mate with the bump material is devoid of any SROof masking layer 356 that would have been used for bump containmentduring reflow.

FIG. 20d shows another embodiment of conductive traces 360 and 362arranged in an array of multiple rows with offset integrated bump pad orinterconnect site 364 formed on substrate 366 for maximum interconnectdensity and capacity. Alternate conductive traces 360 and 362 include anelbow for routing to bump pads 364. The sides of each substrate bump pad364 is co-linear with conductive traces 360 and 362. Masking layer 368can be formed over a portion of substrate 366; however, masking layer368 is not formed around substrate bump pad 364 of conductive traces 360and 362. That is, the portion of conductive trace 360 and 362 designedto mate with the bump material is devoid of any SRO of masking layer 368that would have been used for bump containment during reflow.

FIG. 20e shows another embodiment of conductive traces 370 and 372arranged in an array of multiple rows with offset integrated bump pad orinterconnect site 374 formed on substrate 376 for maximum interconnectdensity and capacity. Alternate conductive traces 370 and 372 include anelbow for routing to bump pads 374. In this case, substrate bump pad 374is rounded and wider than conductive traces 370 and 372, but less thanthe width of the mating interconnect bump material. Masking layer 378can be formed over a portion of substrate 376; however, masking layer378 is not formed around substrate bump pad 374 of conductive traces 370and 372. That is, the portion of conductive trace 370 and 372 designedto mate with the bump material is devoid of any SRO of masking layer 378that would have been used for bump containment during reflow.

FIG. 20f shows another embodiment of conductive traces 380 and 382arranged in an array of multiple rows with offset integrated bump pad orinterconnect site 384 formed on substrate 386 for maximum interconnectdensity and capacity. Alternate conductive traces 380 and 382 include anelbow for routing to bump pads 384. In this case, substrate bump pad 384is rectangular and wider than conductive traces 380 and 382, but lessthan the width of the mating interconnect bump material. Masking layer388 can be formed over a portion of substrate 386; however, maskinglayer 388 is not formed around substrate bump pad 384 of conductivetraces 380 and 382. That is, the portion of conductive trace 380 and 382designed to mate with the bump material is devoid of any SRO of maskinglayer 388 that would have been used for bump containment during reflow.

As one example of the interconnect process, semiconductor die 224 isplaced over substrate 366 and bump material 234 is aligned withsubstrate bump pads 364 from FIG. 20d . Bump material 234 iselectrically and metallurgically connected to substrate bump pad 364 bypressing the bump material or by bringing the bump material in physicalcontact with the bump pad and then reflowing the bump material under areflow temperature, as described for FIGS. 12a-12g, 13a-13d, 14a-14d,15a-15c, and 16a -16 b.

In another embodiment, an electrically conductive bump material isdeposited over substrate bump pad 364 using an evaporation, electrolyticplating, electroless plating, ball drop, or screen printing process. Thebump material can be Al, Sn, Ni, Au, Ag, Pb, Bi, Cu, solder, andcombinations thereof, with an optional flux solution. For example, thebump material can be eutectic Sn/Pb, high-lead solder, or lead-freesolder. The bump material is bonded to substrate bump pad 364 using asuitable attachment or bonding process. In one embodiment, the bumpmaterial is reflowed by heating the material above its melting point toform bump or interconnect 390, as shown in FIG. 20g . In someapplications, bump 390 is reflowed a second time to improve electricalcontact to substrate bump pad 364. The bump material around the narrowsubstrate bump pad 364 maintains die placement during reflow. Bumpmaterial 234 or bumps 390 can also be formed on substrate bump padconfigurations of FIGS. 20a -20 g.

In high routing density applications, it is desirable to minimize escapepitch of conductive traces 360 and 362 or other conductive traceconfigurations of FIGS. 20a-20g . The escape pitch between conductivetraces 360 and 362 can be reduced by eliminating the masking layer forthe purpose of reflow containment, i.e., by reflowing the bump materialwithout a masking layer. Since no SRO is formed around die bump pad 232or substrate bump pad 364, conductive traces 360 and 362 can be formedwith a finer pitch, i.e., conductive traces 360 and 362 can be disposedcloser together or to nearby structures. With no SRO around substratebump pad 364, the pitch between conductive traces 360 and 362 is givenas P=D/2+PLT+W/2, wherein D is the base diameter of bump 390, PLT is dieplacement tolerance, and W is the width of conductive traces 360 and362. In one embodiment, given a bump base diameter of 100 μm, PLT of 10μm, and trace line width of 30 μm, the minimum escape pitch ofconductive traces 360 and 362 is 125 μm. The mask-less bump formationeliminates the need to account for the ligament spacing of maskingmaterial between adjacent openings, SRT, and minimum resolvable SRO, asfound in the prior art.

When the bump material is reflowed without a masking layer tometallurgically and electrically connect die bump pad 232 to substratebump pad 364, the wetting and surface tension causes the bump materialto maintain self-confinement and be retained within the space betweendie bump pad 232 and substrate bump pad 364 and portion of substrate 366immediately adjacent to conductive traces 360 and 362 substantiallywithin the footprint of the bump pads.

To achieve the desired self-confinement property, the bump material canbe immersed in a flux solution prior to placement on die bump pad 232 orsubstrate bump pad 364 to selectively render the region contacted by thebump material more wettable than the surrounding area of conductivetraces 360 and 362. The molten bump material remains confinedsubstantially within the area defined by the bump pads due to thewettable properties of the flux solution. The bump material does notrun-out to the less wettable areas. A thin oxide layer or otherinsulating layer can be formed over areas where bump material is notintended to make the area less wettable. Hence, masking layer 368 is notneeded around die bump pad 232 or substrate bump pad 364.

In FIG. 21a , masking layer 392 is deposited over a portion ofconductive traces 394 and 396. However, masking layer 392 is not formedover integrated bump pads 398. Consequently, there is no SRO for eachbump pad 398 on substrate 400. A non-wettable masking patch 402 isformed on substrate 400 interstitially within the array of integratedbump pads 398, i.e., between adjacent bump pads. The masking patch 402can also be formed on semiconductor die 224 interstitially within thearray of die bump pads 398. More generally, the masking patch is formedin close proximity to the integrated bump pads in any arrangement toprevent run-out to less wettable areas.

Semiconductor die 224 is placed over substrate 400 and the bump materialis aligned with substrate bump pads 398. The bump material iselectrically and metallurgically connected to substrate bump pad 398 bypressing the bump material or by bringing the bump material in physicalcontact with the bump pad and then reflowing the bump material under areflow temperature, as described for FIGS. 12a-12g, 13a-13d, 14a-14d,15a-15c, and 16a -16 b.

In another embodiment, an electrically conductive bump material isdeposited over die integrated bump pads 398 using an evaporation,electrolytic plating, electroless plating, ball drop, or screen printingprocess. The bump material can be Al, Sn, Ni, Au, Ag, Pb, Bi, Cu,solder, and combinations thereof, with an optional flux solution. Forexample, the bump material can be eutectic Sn/Pb, high-lead solder, orlead-free solder. The bump material is bonded to integrated bump pads398 using a suitable attachment or bonding process. In one embodiment,the bump material is reflowed by heating the material above its meltingpoint to form spherical balls or bumps 404. In some applications, bumps404 are reflowed a second time to improve electrical contact tointegrated bump pads 398. The bumps can also be compression bonded tointegrated bump pads 398. Bumps 404 represent one type of interconnectstructure that can be formed over integrated bump pads 398. Theinterconnect structure can also use stud bump, micro bump, or otherelectrical interconnect.

In high routing density applications, it is desirable to minimize escapepitch. In order to reduce the pitch between conductive traces 394 and396, the bump material is reflowed without a masking layer aroundintegrated bump pads 398. The escape pitch between conductive traces 394and 396 can be reduced by eliminating the masking layer and associatedSROs around the integrated bump pads for the purpose of reflowcontainment, i.e., by reflowing the bump material without a maskinglayer. Masking layer 392 can be formed over a portion of conductivetraces 394 and 396 and substrate 400 away from integrated bump pads 398;however, masking layer 392 is not formed around integrated bump pads398. That is, the portion of conductive trace 394 and 396 designed tomate with the bump material is devoid of any SRO of masking layer 392that would have been used for bump containment during reflow.

In addition, masking patch 402 is formed on substrate 400 interstitiallywithin the array of integrated bump pads 398. Masking patch 402 isnon-wettable material. Masking patch 402 can be the same material asmasking layer 392 and applied during the same processing step, or adifferent material during a different processing step. Masking patch 402can be formed by selective oxidation, plating, or other treatment of theportion of the trace or pad within the array of integrated bump pads398. Masking patch 402 confines bump material flow to integrated bumppads 398 and prevents leaching of conductive bump material to adjacentstructures.

When the bump material is reflowed with masking patch 402 interstitiallydisposed within the array of integrated bump pads 398, the wetting andsurface tension causes the bump material to be confined and retainedwithin the space between die bump pads 232 and integrated bump pads 398and portion of substrate 400 immediately adjacent to conductive traces394 and 396 and substantially within the footprint of the integratedbump pads 398.

To achieve the desired confinement property, the bump material can beimmersed in a flux solution prior to placement on die bump pads 232 orintegrated bump pads 398 to selectively render the region contacted bythe bump material more wettable than the surrounding area of conductivetraces 394 and 396. The molten bump material remains confinedsubstantially within the area defined by the bump pads due to thewettable properties of the flux solution. The bump material does notrun-out to the less wettable areas. A thin oxide layer or otherinsulating layer can be formed over areas where bump material is notintended to make the area less wettable. Hence, masking layer 392 is notneeded around die bump pads 232 or integrated bump pads 398.

Since no SRO is formed around die bump pads 232 or integrated bump pads398, conductive traces 394 and 396 can be formed with a finer pitch,i.e., the conductive traces can be disposed closer to adjacentstructures without making contact and forming electrical shorts.Assuming the same solder registration design rule, the pitch betweenconductive traces 394 and 396 is given as P=(1.1D+W)/2, where D is thebase diameter of bump 404 and W is the width of conductive traces 394and 396. In one embodiment, given a bump diameter of 100 μm and traceline width of 20 μm, the minimum escape pitch of conductive traces 394and 396 is 65 μm. The bump formation eliminates the need to account forthe ligament spacing of masking material between adjacent openings andminimum resolvable SRO, as found in the prior art.

FIG. 22 shows package-on-package (PoP) 405 with semiconductor die 406stacked over semiconductor die 408 using die attach adhesive 410.Semiconductor die 406 and 408 each have an active surface containinganalog or digital circuits implemented as active devices, passivedevices, conductive layers, and dielectric layers formed within the dieand electrically interconnected according to the electrical design andfunction of the die. For example, the circuit can include one or moretransistors, diodes, and other circuit elements formed within the activesurface to implement analog circuits or digital circuits, such as DSP,ASIC, memory, or other signal processing circuit. Semiconductor die 406and 408 can also contain IPDs, such as inductors, capacitors, andresistors, for RF signal processing.

Semiconductor die 408 is mounted to conductive traces 412 formed onsubstrate 414 using bump material 416 formed on contact pads 418, usingany of the embodiments from FIGS. 12a-12g, 13a-13d, 14a-14d, 15a-15c,and 16a-16b . Conductive traces 412 with interconnect sites are coveredby electroless surface treatment 411 and adjacent conductive traces 412are coated with oxide or insulating layer 413, as described in FIGS.6a-6d and 8a-8g and similar to FIGS. 7a and 7b . The oxide layer 413prevents electrical shorting between adjacent conductive traces 412, asdescribed in FIG. 9. Semiconductor die 406 is electrically connected tocontact pads 420 formed on substrate 414 using bond wires 422. Theopposite end of bond wire 422 is bonded to contact pads 424 onsemiconductor die 406.

Masking layer 426 is formed over substrate 414 and opened beyond thefootprint of semiconductor die 408. While masking layer 426 does notconfine bump material 416 to conductive traces 412 during reflow, theopen mask can operate as a dam to prevent encapsulant 428 from migratingto contact pads 420 or bond wires 422 during MUF. Encapsulant 428 isdeposited between semiconductor die 408 and substrate 414, similar toFIGS. 17a-17c . Masking layer 426 blocks MUF encapsulant 428 fromreaching contact pads 420 and bond wires 422, which could cause adefect. Masking layer 426 allows a larger semiconductor die to be placedon a given substrate without risk of encapsulant 428 bleeding ontocontact pads 420.

While one or more embodiments of the present invention have beenillustrated in detail, the skilled artisan will appreciate thatmodifications and adaptations to those embodiments may be made withoutdeparting from the scope of the present invention as set forth in thefollowing claims.

What is claimed:
 1. A semiconductor device, comprising: a substrate; aninterconnect site contacting a surface of the substrate; a surfacetreatment formed over a top surface and a side surface of theinterconnect site; a conductive trace formed over the surface of thesubstrate less than 150 micrometers from the interconnect site andelectrically isolated from the interconnect site; and a copper oxidelayer formed over the conductive trace with the interconnect site andsurface treatment devoid of the copper oxide layer.
 2. The semiconductordevice of claim 1, further including a semiconductor die disposed overthe substrate with an interconnect structure electrically connecting thesemiconductor die to the interconnect site and contacting the copperoxide layer over the conductive trace.
 3. The semiconductor device ofclaim 2, wherein the interconnect structure is selected from a groupconsisting of a bump including fusible material, bump includingnon-fusible portion and fusible portion, bump including surfaceasperities, bump having a length along the interconnect site greaterthan a width across the interconnect site, and bump including a tip. 4.The semiconductor device of claim 2, further including an underfillmaterial disposed between the semiconductor die and substrate.
 5. Thesemiconductor device of claim 1, further including an opening formedthrough the interconnect site.
 6. The semiconductor device of claim 1,further including a mask patch formed over the conductive trace.
 7. Amethod of making a semiconductor device, comprising: providing asubstrate; forming an interconnect site contacting a surface of thesubstrate; forming a surface treatment over a top surface and a sidesurface of the interconnect site; forming a conductive trace over thesurface of the substrate and electrically isolated from the interconnectsite; and forming a copper oxide layer over the conductive trace withthe interconnect site and surface treatment devoid of the copper oxidelayer.
 8. The method of claim 7, further including: forming aninterconnect structure over the interconnect site with a portion of theinterconnect structure over first and second surfaces of the copperoxide layer; and disposing a semiconductor die over the substrate withthe interconnect structure electrically connecting the semiconductor dieto the interconnect site and contacting the copper oxide layer over theconductive trace.
 9. The method of claim 8, wherein the interconnectstructure is selected from a group consisting of a bump includingfusible material, bump including non-fusible portion and fusibleportion, bump including surface asperities, bump having a length alongthe interconnect site greater than a width across the interconnect site,and bump including a tip.
 10. The method of claim 8, further includingdisposing an underfill material between the semiconductor die andsubstrate.
 11. The method of claim 7, further including forming a maskpatch over the conductive trace.
 12. The method of claim 7, whereinforming the copper oxide layer includes: forming a mask over theinterconnect site including an opening over the conductive trace; andforming the copper oxide layer over the conductive trace.
 13. Asemiconductor device, comprising: a substrate; an interconnect sitecontacting a surface of the substrate, the interconnect site including atop surface and a side surface; a surface treatment formed over the topsurface and the side surface of the interconnect site; a conductivetrace formed over the surface of the substrate and electrically isolatedfrom the interconnect site; a copper oxide layer formed over theconductive trace, wherein the interconnect site and the surfacetreatment are devoid of the copper oxide layer; a semiconductor die; anda bump formed between the semiconductor die and interconnect site andover the top surface and side surface of the surface treatment, the bumpcontacting the surface of the substrate between the interconnect siteand the conductive trace, the bump contacting the copper oxide layer,and the copper oxide layer separating the bump from the conductivetrace.
 14. The semiconductor device of claim 13, wherein the bumpelectrically connects the semiconductor die to the interconnect site.15. The semiconductor device of claim 14, wherein the bump includes anon-fusible portion and fusible portion.
 16. The semiconductor device ofclaim 14, further including an underfill material disposed between thesemiconductor die and substrate.
 17. A semiconductor device, comprising:a substrate; an interconnect site formed over the substrate; a surfacetreatment formed over a top surface and a side surface of theinterconnect site and contacting the substrate; a conductive traceformed over the substrate; a copper oxide layer covering a width of theconductive trace; and a bump formed between a semiconductor die and theinterconnect site, the bump contacting the surface treatment and copperoxide layer.
 18. The semiconductor device of claim 17, wherein theconductive trace is formed over the substrate within a footprint of thebump.
 19. The semiconductor device of claim 17, wherein the conductivetrace is formed over the substrate less than 150 micrometers from theinterconnect site.
 20. The semiconductor device of claim 17, wherein theconductive trace is formed over the substrate adjacent to theinterconnect site.
 21. A semiconductor device, comprising: a substrate;an interconnect site contacting a surface of the substrate; a surfacetreatment formed over a top surface and a side surface of theinterconnect site; a conductive layer formed over the surface of thesubstrate and electrically isolated from the interconnect site; and acopper oxide layer formed over the conductive layer with theinterconnect site and surface treatment devoid of the copper oxidelayer.
 22. The semiconductor device of claim 21, wherein the copperoxide layer includes an oxide layer.
 23. The semiconductor device ofclaim 21, wherein the interconnect site includes a contact pad.
 24. Thesemiconductor device of claim 21, further including a bump disposed overthe interconnect site.
 25. The semiconductor device of claim 21, whereinthe conductive layer is electrically isolated from the interconnect siteby the copper oxide layer.
 26. The semiconductor device of claim 21,further including a mask formed over the interconnect site with anopening in the mask over the conductive layer.
 27. The semiconductordevice of claim 13, wherein the conductive trace is disposed within afootprint of the bump.